Voltage controlled attenuator using PN diodes
US5565823A · kind A · utility
7Cited by
7References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 21, 1994 |
| Grant date | Oct 15, 1996 |
| Priority date | — |
| Expiry date | Dec 21, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H7/255
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A fully integrator RF attenuator performs gain control upon a received RF signal without the use of an off-silicon PIN diode. The attenuator includes a T-configuration pad in conjunction with a current source. A direct current signal biases a shunt element in the T-pad. Preferably, a voltage control signal which controls the direct current is generated as a negative feedback signal in proportion to the magnitude of the RF detected at the attenuator output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.