Removing agent composition for photoresist and method of removing
US5567574A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1995 |
| Grant date | Oct 22, 1996 |
| Priority date | — |
| Expiry date | Dec 8, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A removing agent composition for a photoresist is disclosed which comprises 5 to 50% by weight of an alkanolamine, an alkoxyalkylamine or an alkoxyalkanolamine, 1 to 30% by weight of a glycol monoalkyl ether, 0.5 to 15% by weight of a sugar or a sugaralcohol, 0.01 to 10% by weight of a quaternary ammonium hydroxide, if necessary, and water as the balance; and a method of removing by the use of this composition is also disclosed herein. According to the present invention, there can be provided the removing agent composition for the photoresist which can easily remove, at a low temperature in a short time, a photoresist film applied onto an inorganic substrate in a manufacturing process of semiconductor integrated patterns, a remaining photoresist layer after dry etching or a remaining photoresist residue after ashing and which does not corrode a wiring material at all and which can be rinsed with water alone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.