Semiconductor device
US5567961A · kind A · utility
33Cited by
3References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 3, 1993 |
| Grant date | Oct 22, 1996 |
| Priority date | — |
| Expiry date | Aug 3, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/05
Abstract
A semiconductor device may include a double hetero junction bipolar transistor and a field-effect transistor. The base of the bipolar transistor and the gate of the field-effect transistor are connected to each other to serve as an input terminal and the collector of the bipolar transistor and the drain of the field-effect transistor are connected to each other to serve as an output terminal. The bipolar transistor and the field-effect transistor may be created on a common substrate. In this case, both the bipolar and field-effect transistors can have the same multilayer/film structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.