Laser diode element with excellent intermodulation distortion characteristic
US5568505A · kind A · utility
5Cited by
14References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1995 |
| Grant date | Oct 22, 1996 |
| Priority date | — |
| Expiry date | Jun 6, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1225
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a laser diode element including a front facet, a rear facet, a laser cavity formed between the front the rear facets and which has a predetermined length L, coating layers coated on the front facet to provide a reflectivity smaller than 5%, and an active layer and a uniform grating having regular corrugation formed in the direction of the laser cavity and which are coupled to each other at a predetermined coupling constant K, the laser diode element is specified by a product of the predetermined coupling constant and the predetermined length L and falling within a range between 0.4 and 1.0, both inclusive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.