Zinc oxide piezoelectric crystal film on sapphire plane
US5569548A · kind A · utility
95Cited by
8References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 1994 |
| Grant date | Oct 29, 1996 |
| Priority date | — |
| Expiry date | Aug 2, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/91
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
When a zinc oxide piezoelectric crystal film is epitaxially grown on an R-plane sapphire substrate by sputtering, a target containing not more than 4.5 percent by weight of Cu with respect to the total content of Zn and Cu is employed so that the zinc oxide piezoelectric film contains Cu. Thus, it is possible to obtain a zinc oxide piezoelectric crystal film having excellent orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.