Method of making integrated spacer for magnetoresistive RAM

US5569617A · kind A · utility

Assignee

• Honeywell Limited · US

Inventors

• Tangshiun Yeh · Windom, US
• Allan T. Hurst · Plymouth, US
• Huang-Joung Chen · Maple Grove, US
• Lonny Berg · Elk River, US
• William Witcraft · Minneapolis, US

Key dates

• Filing date: Dec 21, 1995
• Grant date: Oct 29, 1996
• Expiry date: Dec 21, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/01

Abstract

In a magnetoresistive random access memory device, a spacer material is deposited at the edges of a memory bit to maintain magnetization at the edges in a direction along the edges.