Hydrogen passivated heteroepitaxial III-V photovoltaic devices grown on lattice-mismatched substrates, and process
US5571339A · kind A · utility
31Cited by
3References
23Claims
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Key dates
| Filing date | Apr 17, 1995 |
| Grant date | Nov 5, 1996 |
| Priority date | — |
| Expiry date | Apr 17, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
Abstract
A hydrogen passivated photovoltaic device such as a solar cell comprises a lattice mismatched substrate such as Ge or Si, and a hydrogen passivated heteroepitaxial layer such as InP grown on the substrate. The hydrogen passivated heteroepitaxial III-V photovoltaic device is produced by exposing a sample of a heteroepitaxial III-V material grown on a lattice-mismatched substrate to reactive hydrogen species at elevated temperatures. Reactive hydrogen forms bonds with dangling bonds along dislocations defined in the sample. The electrical activity in the dislocations is passivated as a result of the hydrogenation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.