Field emission cathode device made of semiconductor substrate
US5572041A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1993 |
| Grant date | Nov 5, 1996 |
| Priority date | — |
| Expiry date | Sep 16, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/319
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field emission cathode device comprising a semiconductor substrate, a semiconductor cathode electrode layer, emitter tips formed on the cathode electrode layer to emit electrons therefrom, and a gate electrode layer formed on an insulating layer. Each of the emitter tips is arranged in the aligned apertures of the gate electrode layer and the insulating layer. To electrically isolate two adjacent cathode electrode lines from each other, the cathode electrode layer is made of a semiconductor having a conductivity type different from that of the substrate. Alternatively, the cathode electrode is made of a semiconductor having the same conductivity type as that of the substrate, and in this case, a portion between two adjacent cathode electrode lines is made of a heavily doped semiconductor so as to electrically isolate two adjacent cathode electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.