Integrated zener-zap nonvolatile memory cell with programming and pretest capability
US5572472A · kind A · utility
23Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1995 |
| Grant date | Nov 5, 1996 |
| Priority date | — |
| Expiry date | Apr 14, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/04
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A "zener-zap" memory cell with pretest capability for testing effects that would be realized from permanently programming the memory cell is provided. The memory cell is addressable and provides a binary signal at an output. The memory cell uses a zener diode as a memory element which is permanently programmed when selectively coupled to a programming voltage which exceeds the reverse breakdown voltage of the zener diode. The memory cell has a test circuit for generating the programmed binary signal at the output of the memory cell prior to permanently programming the zener diode and when coupled to a pretest voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.