Integrated circuit having a diamond thin film trench arrangement as a component thereof and method
US5573973A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 1994 |
| Grant date | Nov 12, 1996 |
| Priority date | — |
| Expiry date | Nov 14, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit based on submicron technology is disclosed herein along with the way in which it is formed. The integrated circuit is comprised of an arrangement of different substances which are combined to form its body structure and which define within the body structure an array of electronic components including a diamond thin film coated trench arrangement. In one embodiment disclosed herein, the array of electronic component includes two such components which are in close proximity to and must be electrically isolated from one another and the diamond thin film coated trench arrangement serves to electrically isolate these two components from each other. In a second embodiment, the diamond thin film coated trench is specifically designed to serve as a capacitor forming part of, for example, a DRAM, a mixed signal circuit or a neuro-fuzzy circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.