Article comprising a thin film transistor with low conductivity organic layer
US5574291A · kind A · utility
100Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1994 |
| Grant date | Nov 12, 1996 |
| Priority date | — |
| Expiry date | Dec 9, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Organic thin film transistors having improved properties (e.g., on/off ratio>10.sup.5 at 20.degree. C.) are disclosed. The improved transistors comprise an organic active layer of low conductivity (<5.times.10.sup.-8 S/cm at 20.degree. C., preferably less than 10.sup.-8 or even 10.sup.-9 S/cm). A method of producing such materials is disclosed. Rapid thermal annealing was found to have beneficial results. An exemplary and preferred material is .alpha.-hexathienylene (.alpha.-6T). The improved transistors are expected to find use for, e.g., active liquid crystal displays and for memories.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.