Patent · US Expired

Low-inductance power semiconductor module

US5574312A · kind A · utility

70Cited by

3References

19Claims

0Family size

Assignee

ABB Management AG · CH

Inventors

Reinhold Bayerer · Warstein, DE
Thomas Stockmeier · Baden, CH

Key dates

Filing date	May 5, 1995
Grant date	Nov 12, 1996
Priority date	—
Expiry date	May 5, 2015

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3011
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In the case of a power semiconductor module (1) according to the invention, substrates (8) having a power semiconductor assembly (2) are fitted on both sides of a heat sink (3). The power semiconductor assemblies (2) are made contact with by a stack of contact laminates (4), which contact laminates (4) run parallel to the heat sink (3). A very low-inductance structure is obtained thereby.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.