Method of metallizing high aspect ratio apertures
US5576052A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 1996 |
| Grant date | Nov 19, 1996 |
| Priority date | — |
| Expiry date | Apr 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/427
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing high aspect ratio plated through holes in a circuit carrying substrate. High aspect ratio apertures or holes (16) are formed in a substrate (10). A thin film of copper (20) is sputtered onto the substrate and in the apertures that a macroscopically discontinuous copper film (26) is formed on part of the aperture walls. The macroscopically discontinuous copper film is substantially thinner than the copper film that is deposited on the surface. A catalytic copper coating (30) is plated directly on the vacuum deposited thin film of copper by electroless copper plating in a manner sufficient to form a macroscopically continuous copper layer on the aperture walls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.