Process for creating a deposit of silicon oxide on a traveling solid substrate

US5576076A · kind A · utility

Assignee

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventors

• Frank Slootman · Cosne-Cours-sur-Loire, FR
• Pascal Bouard · Draveil, FR
• François Coeuret · Guyancourt, FR
• Dominique Jouvaud · Paris, FR
• Eckhard Prinz · Schwarzenbek, DE

Key dates

• Filing date: Apr 28, 1994
• Grant date: Nov 19, 1996
• Expiry date: Apr 28, 2014

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/31938
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

According to the process the substrate (2) is subjected to an electrical discharge with a dielectric barrier, for example a discharge in the presence of an atmosphere containing a silane, an oxidizing gas, NO, N.sub.2 O, CO.sub.2 or O.sub.2, in particular, and a neutral carrier gas such as nitrogen or argon. A controlled atmosphere containing the silane and the oxidizing gas is maintained in the immediate vicinity of the electrode, around the electrode (6) employed for the electrical discharge, while avoiding the process being perturbed by atmospheric air entrained, for example, by the substrate (2) as it travels (3).