Semiconductor integrated circuit device and method of manufacturing the same
US5576572A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1994 |
| Grant date | Nov 19, 1996 |
| Priority date | — |
| Expiry date | Apr 29, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/231
Abstract
A semiconductor integrated circuit device having a bipolar transistor and contact in the form of a wired layer by using different impurities for doping the emitter electrode and the wired layer of the device, both of which are made of polysilicon. The emitter electrode, formed on an emitter region of a p-type silicon semiconductor substrate, is doped with an n-type impurity having a low diffusion coefficient. A polysilicon wired layer, formed on an impurity diffusion region in an active region of the semiconductor substrate, is doped with another impurity that can effectively destroy native oxide films. With such an arrangement of selectively using impurities, the temperature of thermally treating the emitter region can be less than 850.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.