Probe structure for measuring electric characteristics of a semiconductor element
US5576630A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 16, 1994 |
| Grant date | Nov 19, 1996 |
| Priority date | — |
| Expiry date | Jun 16, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2886
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A probe structure for measuring electric characteristics of a semiconductor element containing a first electrically conductive circuit board having a structure wherein the contact portions, which are contacted with the terminals of a material to be tested, are disposed in a first insulator in the direction of the thickness thereof so as to penetrate the insulator and are connected to a first electrically conductive wiring formed between the first insulator and a second insulator. The probe structure also contains a second electrically conductive circuit board having a coefficient of thermal expansion which is the same as or similar to that of the material to be tested and having a structure wherein the first electrically conductive wiring is connected to a second electrically conductive wiring which, in turn, is connected to an electric tester for testing the electric characteristics of the material to be tested. The first electrically conductive circuit board is electrically connected to the second electrically conductive circuit board, and an elastic body is disposed between the first electrically conductive circuit board and the second electrically conductive circuit board.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.