Superlattice cladding layers for mid-infrared lasers
US5577061A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1994 |
| Grant date | Nov 19, 1996 |
| Priority date | — |
| Expiry date | Dec 16, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/02
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mid-IR laser is provided having novel AlAs/Al.sub.x Ga.sub.1-x Sb or InAs/Al.sub.x Ga.sub.1-x Sb superlattice cladding regions. The arsenide layers of the n-type cladding region are doped n-type, utilizing silicon, and may be used with conventional active region materials, such as InAs.sub.z Sb.sub.1-z and In.sub.w Ga.sub.1-w As.sub.y Sb.sub.1-y. The novel cladding regions can be deposited without the use of Group VI elements, such as Te, which are not preferred source materials for MBE growth. Furthermore, the need for quaternary layers, such as Al.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y, used in the prior art devices, is eliminated; consequently, the need for precise control of two Group V fluxes (As and Sb) is eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.