Method for fabricating a field emission device having black matrix SOG as an interlevel dielectric
US5577943A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 1995 |
| Grant date | Nov 26, 1996 |
| Priority date | — |
| Expiry date | May 25, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of fabricating an anode plate 80 for use in a field emission device. The method comprises the steps of providing a substantially transparent substrate 88 having spaced-apart, electrically conductive regions 50 on a surface thereof, then coating the anode plate with a substantially opaque material 86. The opaque material 86 is removed from the surface of the conductive regions 50 in the active area 58, and from selected areas 60 of the interconnect portion of the conductive regions 50. A first bus 52 is provided for electrically connecting a first series 50.sub.R of the conductive regions 50, a second bus 54 is provided for electrically connecting a second series 50.sub.G of the conductive regions 50, and a third bus 56 is provided for electrically connecting a third series 50.sub.B of the conductive regions 50. Luminescent material of a first color 84.sub.R is applied to the first series of conductive regions 50.sub.R, luminescent material of a second color 84.sub.G is applied to the second series of conductive regions 50.sub.G, and luminescent material of a third color 84.sub.B is applied to the third series of conductive regions 50.sub.B.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.