Patent · US Expired

Apparatus and method for preparing a single crystal

US5578123A · kind A · utility

20Cited by

6References

4Claims

0Family size

Assignee

Wacker Siltronic Gesellschaft Fur Halbleitermaterialien AG · DE

Inventors

Peter Vilzmann · Burghausen, DE
Helmut Pinzhoffer · Tann, DE

Key dates

Filing date	Oct 10, 1995
Grant date	Nov 26, 1996
Priority date	—
Expiry date	Oct 10, 2015

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T117/1088
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Apparatus for preparing a single crystal made of silicon is according to Czochralski method, which includes a tubular to the conical body which shields the growing single crystal and divides the receiver chamber above the melt into an inner portion and an outer portion, the body having at least one orifice through which inert gas which is conducted into the inner portion of the receiver chamber is able to pass directly into the outer portion of the receiver chamber. The method for preparing a single crystal made of silicon is in accordance with the Czochralski method, wherein a portion of an inert gas stream is conducted through at least one orifice in the tubular to conical body from the inner portion into the outer portion of the receiver chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.