Structure of and fabricating method for a thin film transistor
US5578838A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 1995 |
| Grant date | Nov 26, 1996 |
| Priority date | — |
| Expiry date | May 12, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/673
Abstract
A thin film transistor and a fabricating method for a thin film transistor is disclosed which may be suitable for memory cells of a static random access memory (SRAM) or other devices. A thin film transistor according to this invention may include an insulation substrate, a gate electrode formed to have a negative slope at one side thereof on the insulation substrate, an insulation film side wall formed at the other side of the gate electrode, a gate insulation film formed on the insulation substrate, gate electrode and side wall, a semiconductor layer formed on the gate insulation film, impurity diffusion regions selectively formed within the semiconductor layer over the gate electrode, the side wall and the insulation substrate on the other side of the gate electrode, and a channel region formed within the semiconductor layer at the side of the gate electrode having the negative slope. A method for fabricating a thin film transistor in accordance with this invention may include processes for forming a gate electrode on an insulation substrate, forming a side wall at a side of the gate electrode, etching the other side of the gate electrode selectively to have a negative slope, de…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.