Infrared radiation absorption device

US5578858A · kind A · utility

Assignee

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Michael Mueller · Dresden, DE
• Ralf Gottfried-Gottfried · Dresden, DE
• Heinz Kueck · Duisburg, DE

Key dates

• Filing date: Apr 13, 1995
• Grant date: Nov 26, 1996
• Expiry date: Apr 13, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/334

Abstract

The invention relates to an infrared radiation absorption device, which can be unrestrictedly produced from CMOS technology methods and materials. The absorber structure according to the invention comprises a lower layer (1) with a low transmission coefficient, a central layer (2) with a high absorption coefficient and an upper, absorbing component (3) with a low reflection coefficient for the radiation to be absorbed and which is applied from above. The upper component can e.g. comprise depressions in the central layer, whose walls are coated with metal. The absorber structure is used in the inexpensive manufacture of integrated, thermal infrared detectors.