Semiconductor material for use in thermoelectric conversion, thermoelectric converting method and thermoelectric device
US5578864A · kind A · utility
4Cited by
3References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 1995 |
| Grant date | Nov 26, 1996 |
| Priority date | — |
| Expiry date | Aug 14, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/853
Abstract
A thermoelectric semiconductor material is disclosed. The material comprises a double oxide which contains antimony and has a trirutile crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.