Delta-strained quantum-well semiconductor lasers and optical amplifiers
US5579331A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 1995 |
| Grant date | Nov 26, 1996 |
| Priority date | — |
| Expiry date | May 31, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A quantum-well semiconductor laser/amplifier mounted on a highly conductive semiconductor substrate. Inactive regions include a highly doped N-region and a highly doped P-region. The N-region is composed of semiconductor material mounted on the substrate. The active region includes a quantum-well heterostructure of intrinsic semiconductor material that mounts on the N-region. The quantum-well structure includes a series of quantum wells, each having barrier layers, quantum-well layers, and a delta-strained layer mounted near the center of the quantum wells. The delta-strained layers are very thin, being formed from a number of mono-layers of semiconductor material. There is a large lattice mismatch between each of the delta-strained layers and its adjacent quantum-well layers. The band edges of the quantum-well layers and the delta-strained layers are located at substantially the same level. The P-region is composed of a semiconductor material that mounts on the quantum-well structure. A conductive contact is joined to the P-region. When used as a semiconductor laser, the active region forms a resonant laser cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.