Nanoelectric devices
US5581091A · kind A · utility
Inventors
Key dates
| Filing date | Dec 1, 1994 |
| Grant date | Dec 3, 1996 |
| Priority date | — |
| Expiry date | Dec 1, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/937
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Single-electron devices useful as diodes, transistors or other electronic components are prepared by anodizing a metal substrate in sheet or foil form electrolytically in an acid bath, to deposit thereon an oxide film having axially disposed micropores of substantially uniform diameter in the range of from about 1 to about 500 nanometers and substantially uniform depth less than the thickness of the oxide film, leaving an ultra thin oxide layer between the bottom of each pore in the metal substrate. The conductive material is deposited in the pores to form nanowires contacting the oxide layer at the bottom of the pores. Macro metal is deposited over the ends of the nanowires for external electrical contact purposes. Devices can be made according to the present invention which are suitable to exhibit single-electron tunnelling effects and arrays of tunnel junction devices can be prepared having a density up to the order of 10.sup.10 per square cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.