Photodetector, a photodector array comprising photodetectors, an object detector comprising the photodetecter array and an object detecting procedure
US5581094A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 1994 |
| Grant date | Dec 3, 1996 |
| Priority date | — |
| Expiry date | Sep 1, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A photodetector has a semiconductor substrate which produces light-induced charge upon the absorption of incident light. A first electrode and a second electrode are attached to the surface of the semiconductor substrate so as to form metal-semiconductor junctions. When control voltage V.sub.B, which is variable in a positive range through a negative range, is applied to the first electrode, a photocurrent flows through the second electrode and depletion layers are formed in the surface of the semiconductor substrate. The control voltage V.sub.B applied to the first electrode increases the expanse of one of the depletion layers relative to that of the other to cause the light-induced charge to drift toward one of the depletion layers or the other. Consequently, a positive or negative current is delivered through the second electrode. Thus, the photosensitivity of the photodetector can be controlled by the control voltage V.sub.B.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.