Integrated semiconductor device having a thyristor

US5581096A · kind A · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Adolf Kugelmann
• Vinko Marolt · Stuttgart, DE
• Uwe Guenther · Nufringen, DE
• Oliver Schatz · Reutlingen, DE

Key dates

• Filing date: Nov 22, 1994
• Grant date: Dec 3, 1996
• Expiry date: Nov 22, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D18/251

Abstract

An integrated semiconductor device having a thyristor includes outer npn-transistors, outer pnp-transistors, and an inner npn-transistor. The outer pnp-transistors and the inner npn-transistor are interconnected so as to form a thyristor to allow the inner transistor to be biased into conduction. Furthermore, a current flow takes place via the outer npn-transistors and the inner npn-transistor. The integrated semiconductor device having a thyristor minimizes interference produced in neighboring components.