Infrared detection element array and method for fabricating the same
US5583058A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 1994 |
| Grant date | Dec 10, 1996 |
| Priority date | — |
| Expiry date | May 17, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2005/202
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An object of the present invention is to provide a highly integrated infrared detecting element array having infrared detecting elements which are disposed at a high density and have a low heat capacity each. An insulator film 2 is provided on a silicon substrate 1 having upper surface in a {100} plane; opening portions are defined by etching right-angled triangular portions defined at four corners of each of right-angled quadrilaterals arranged in matrix array and enclosed by two orthogonally crossing pairs of parallel linear portions extending on the insulator film a pyramid cavity; 3 is defined into the silicon substrate underlying the insulator film 2 by anisotropically etching the silicon substrate; and infrared detecting elements are formed on the insulator film 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.