Method for manufacturing a semiconductor photo-sensor
US5583076A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Dec 10, 1996 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
Abstract
In a method for manufacturing a semiconductor photo-sensor, an assembly including a photoelectric conversion element having a photoreceiving section, and a lead terminal having an inner lead connected to the photoelectric conversion element by a bonding wire is provided. A light transmitting member is also provided within the cavity spaced apart from the photoelectric conversion element and at a light-incident side of the photoelectric conversion element, the light transmitting member having an inner surface facing an upper surface of the photoelectric conversion element and an outer surface opposite the inner surface. The photoelectric conversion element, the inner lead and the bonding wire are sealed by introducing a light transmitting resin into the cavity so as to provide a relation l<2.multidot.(d.sub.1 +d.sub.2).multidot.tan.theta..sub.1, wherein l is a length of the photoreceiving section of the photoelectric conversion element, d.sub.1 is a thickness of the light transmitting resin above the upper surface of the photoelectric conversion element, d.sub.2 is a thickness of the light transmitting member, and .theta..sub.1 is a total reflection angle of the outer surface of the…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.