HgCdTe S-I-S two color infrared detector
US5583338A · kind A · utility
11Cited by
1References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 27, 1994 |
| Grant date | Dec 10, 1996 |
| Priority date | — |
| Expiry date | Jun 27, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2823
Abstract
A HgCdTe S-I-S (semiconductor-insulator-semiconductor) two color infrared detector wherein the semiconductor regions are group II-VI, preferably HgCdTe, with different compositions for the desired spectral regions. The device is operated as a simple integrating MIS device with respect to one semiconductor. The structure can be grown by current MBE techniques and does not require any significant additional steps with regard to fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.