Low-noise, reach-through, avalanche photodiodes
US5583352A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1994 |
| Grant date | Dec 10, 1996 |
| Priority date | — |
| Expiry date | Apr 29, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A new reach-through APD structure which includes a five-layer, double-drift-region, double-junction device, having a p.sup.+ -p-n-p.sup.- -n.sup.+ structure. The middle three layers of the new APD constitute most of the thickness of the device and are fully depleted when the device is biased to its normal operating voltage. In the present invention, only primary carriers generated in the relatively narrow first drift region are subject to the full avalanche gain, resulting in dark current and noise levels much lower than conventional reach-through APD's. The new structure can be used to fabricate integrated arrays of APD's. These arrays are more durable and easily fabricated than are prior art APD's. Additionally, the new array structure does not require segmentation or isolation of the multiplying regions of the different elements of the array, allowing arrays to be made with little or no dead space between elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.