Susceptor for semiconductor wafer processing
US5584936A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1995 |
| Grant date | Dec 17, 1996 |
| Priority date | — |
| Expiry date | Dec 14, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A susceptor for rapid thermal processing for epitaxial deposition upon semiconductor wafers. The susceptor includes an outer supporting ring upon which the wafer rests. This outer ring is preferably formed of a monolithic mass of silicon carbide, and most preferably high purity .beta.-phase (face-centered cubic) silicon carbide. The wafer is supported upon a small wafer shoulder on the ring. To prevent deposition upon the rear or bottom face of the wafer, a blocker shoulder is also provided in the ring, below the wafer shoulder, and a blocker is placed upon this shoulder. The blocker is preferably formed of quartz, and simply rests upon the shoulder. In this manner the ring and blocker may expand at different rates upon the rapid temperature changes, and the blocker or ring may be replaced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.