Thin-film conductor and method of fabricating the same
US5585167A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1993 |
| Grant date | Dec 17, 1996 |
| Priority date | — |
| Expiry date | Apr 27, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin-film conductor is made of (Sr.sub.1-y Ca.sub.y).sub.1-x CuO.sub.z, wherein 0.ltoreq.x.ltoreq.0.1 and 0.ltoreq.y.ltoreq.0.5, and z is approximately equal to or smaller than 2. In a method of fabricating the thin-film conductor, it is preferably to heat a substrate. A first atomic layer of metal including Sr or including Sr and Ca is formed on the heated substrate. A second atomic layer of oxide containing Cu is formed on the first atomic layer. A first atomic layer of metal including Sr or including Sr and Ca is formed on the second atomic layer. These steps are repeated to form a lamination of an alternation of the first atomic layers and the second atomic layers on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.