Magnetorsistance effect element
US5585198A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 1994 |
| Grant date | Dec 17, 1996 |
| Priority date | — |
| Expiry date | Oct 20, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A magnetoresistance effect element includes a non-magnetic substrate, a ferromagnetic dispersion layer or a ferromagnetic layer, and a non-magnetic metal film. The ferromagnetic dispersion layer is a layer of a ferromagnetic metal or alloy that is independently and dispersedly formed on the substrate. The alternative ferromagnetic layer is a layer of a ferromagnetic metal or alloy that is formed on the substrate with a textured surface. The non-magnetic metal film is made of at least one atomic element having a non-soluble relation with the ferromagnetic metal or alloy, and is formed on the non-magnetic substrate and the ferromagnetic dispersion layer or the ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.