Compound semiconductor devices and methods of making compound semiconductor devices
US5585649A · kind A · utility
30Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 1995 |
| Grant date | Dec 17, 1996 |
| Priority date | — |
| Expiry date | Mar 14, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/832
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A compound semiconductor device with an improved internal current blocking structure. The semiconductor device includes an n-clad layer of II-VI compound semiconductor, a p-clad layer of II-VI compound semiconductor, an active layer of II-VI compound semiconductor between the n-clad and p-clad layers, a very thin current blocking layer of n-type II-VI compound semiconductor on the p-clad layer and providing an opening, a p-contact layer of p-type II-VI compound semiconductor on the p-clad layer and the current blocking layer at the opening, and a p-side electrode on the p-contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.