Thin film resistors comprising ruthenium oxide
US5585776A · kind A · utility
11Cited by
22References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1993 |
| Grant date | Dec 17, 1996 |
| Priority date | — |
| Expiry date | Nov 9, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49099
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a first embodiment of the invention a layer of ruthenium oxide is reactively deposited onto a substrate, then annealed for TCR adjustment and for stabilization. In a second, bi-layer embodiment of the invention, a layer of tantalum nitride is first reactively deposited onto a substrate, then annealed for stabilization. After a ruthenium oxide layer is reactively deposited onto the annealed tantalum nitride layer, the structure is annealed until a near-zero effective TCR for the bi-layer resistor is achieved. The ruthenium oxide capping layer serves as a barrier against chemical attack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.