Semiconductor laser having an AlGaInP cladding layer
US5586135A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1993 |
| Grant date | Dec 17, 1996 |
| Priority date | — |
| Expiry date | Dec 28, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3211
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes a GaAs substrate, an active layer made of a semiconductor material having a band gap energy smaller than that of GaAs, and a top clad having an AlGaInP cladding layer. An index antiguiding type semiconductor laser is constituted based on the above structure. The top clad includes a base layer formed on the active layer and a protrusion strip for current injection protruding from the base layer and having an AlGaInP cladding layer. An AlGaInP light diffusion layer with an Al proportion smaller than that of the AlGaInP cladding layer and inclusive of zero is formed on the base layer adjacent to the protrusion strip. The base layer has a thickness so as to allow laser oscillation light to leak out to the light diffusion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.