Plasma processing method and an apparatus for carrying out the same
US5587205A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1993 |
| Grant date | Dec 24, 1996 |
| Priority date | — |
| Expiry date | Dec 23, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing method for processing a thin film formed on a substrate or forming a thin film on a substrate within a vacuum vessel provides for supplying a gas into the vacuum vessel, producing a plasma in the vacuum vessel by applying a microwave to the gas, and creating a static magnetic field represented by magnetic lines of force parallel to the direction of propagation of the microwave in the vacuum vessel by a magnetic circuit. The field intensity of the static magnetic field is determined taking into consideration the frequency of the microwave so that the same is lower than the field intensity at which electron cyclotron resonance occurs. The magnetic flux density of the static magnetic field is determined, taking into consideration the frequency of the high-frequency wave or the microwave, so that the same is not lower than the magnetic flux density at which electron cyclotron resonance occurs, and the density of the plasma is determined so that the left-hand circularly polarized wave is cut off.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.