Semiconductor foil beam-splitter for an infrared spectrometer
US5587831A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 1993 |
| Grant date | Dec 24, 1996 |
| Priority date | — |
| Expiry date | Nov 23, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B27/142
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In a self-supporting beam-splitter (1), in particular for use in an FTIR-spectrometer for the far-infrared region, with an optical thickness on the order of the interesting wavelength region, the foil beam-splitter (1) consists of an undoped semi-conducter material or carbon which is transparent in the far-infrared, and is preferentially made from thin silicon sheets or diamond foil in the thickness region between 2 .mu.m and 125 .mu.m. In this fashion, an extremely high efficiency for the beam-splitter is achieved, whereby little or no resonant absorption takes place due to the beam-splitter in the interesting wavelength region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.