Patent · US Expired

Semiconductor foil beam-splitter for an infrared spectrometer

US5587831A · kind A · utility

5Cited by
3References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 23, 1993
Grant dateDec 24, 1996
Priority date
Expiry dateNov 23, 2013

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B27/142
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

In a self-supporting beam-splitter (1), in particular for use in an FTIR-spectrometer for the far-infrared region, with an optical thickness on the order of the interesting wavelength region, the foil beam-splitter (1) consists of an undoped semi-conducter material or carbon which is transparent in the far-infrared, and is preferentially made from thin silicon sheets or diamond foil in the thickness region between 2 .mu.m and 125 .mu.m. In this fashion, an extremely high efficiency for the beam-splitter is achieved, whereby little or no resonant absorption takes place due to the beam-splitter in the interesting wavelength region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.