Nanocrystalline layer thin film capacitors
US5587870A · kind A · utility
80Cited by
8References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 1994 |
| Grant date | Dec 24, 1996 |
| Priority date | — |
| Expiry date | Jun 22, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for forming a high capacitance thin film capacitor comprising forming layers of dielectric material in amorphous, nanocrystalline and polycrystalline configuration and arranging the resulting layers between upper and lower electrodes. The invention further comprises dielectric articles such as capacitors formed in accordance with the method of the invention and includes their use in an electronic circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.