High speed, low voltage non-volatile memory
US5587951A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 1995 |
| Grant date | Dec 24, 1996 |
| Priority date | — |
| Expiry date | Aug 4, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A low voltage EPROM which increases its reading speed by charging a word line to a voltage higher than vcc during a read operation. Two voltage pumps, which alternately place charge on a word line, receive control signals of opposite phase from a temperature insensitive oscillator. The voltage from the two voltage pumps passes through a zero threshold voltage n-type pass device to a word line. The zero threshold voltage n-type pass device receives its control signal from a third voltage pump. In order to make the low voltage EPROM compatible with standard 5V programmers, each output driving circuit consists of a large output driver used under low voltage V.sub.cc conditions and a smaller output driver used under standard 5V V.sub.cc conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.