Monolithically integrated VLSI optoelectronic circuits and a method of fabricating the same
US5589404A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 1994 |
| Grant date | Dec 31, 1996 |
| Priority date | — |
| Expiry date | Aug 1, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
Abstract
A monolithically integrated, optoelectronic VLSI circuit is fabricated by growing optical devices on the compound semiconductor surface of a VLSI chip or wafer having pre-existing electronic devices formed thereon. In accordance with an illustrative embodiment of the present invention, a large array of surface normal optical modulating devices such as multiple quantum well modulators is grown on an impurity free surface of a VLSI chip having an array of FETs already provided thereon. The growth of such devices takes place at temperatures below 430.degree. C. on a compound semiconductor surface which has a highly ordered atomic structure. An optoelectronic switch constructed in this manner is capable of addressing electronic chips in systems handling 10,000 or more input/output optical beams.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.