Process of selective area chemical vapor deposition of metal films
US5589425A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 1994 |
| Grant date | Dec 31, 1996 |
| Priority date | — |
| Expiry date | Nov 29, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process of growing a film of a metal on a substrate in a selective area thereof by chemical vapor deposition, the process comprising the steps of: preparing a source having a molecule comprising a metal and a radical; providing a substrate having a selective area made of a first substance which is unreactive with the radical and the other area made of copper which is reactive with the radical; and supplying the source onto the substrate held at a film growing temperature to induce a reaction on the substrate, such that, in the selective area, the molecule of the source is bonded to the first substance and decomposed to precipitate the metal on the first substance while, in the other area, the radical of the molecule is combined with the copper to cover the other area of the substrate with a coating which is unreactive with the molecule of the source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.