Epoxy polymer filled with aluminum nitride-containing polymer and semiconductor devices encapsulated with a thermosetting resin containing aluminum nitride particles
US5589714A · kind A · utility
9Cited by
17References
10Claims
0Family size
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Key dates
| Filing date | Mar 24, 1995 |
| Grant date | Dec 31, 1996 |
| Priority date | — |
| Expiry date | Mar 24, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Semiconductor devices are encapsulated in a thermosetting resin filled with aluminum nitride particles. The aluminum nitride particles have an outer layer of Al--O--N, into which is incorporated amorphous Si--O, which renders them hydrolytically stable. The aluminum nitride particles impart very high thermal conductivity to the cured resin. In addition, the cured resin has a CTE similar to that of the encapsulated semiconductor device, and has excellent dielectric properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.