Electroluminescent element including a dielectric film of tantalum oxide and an oxide of either indium, tin, or zinc
US5589733A · kind A · utility
33Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1995 |
| Grant date | Dec 31, 1996 |
| Priority date | — |
| Expiry date | Feb 17, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B33/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Electroluminescent element includes two dielectric layers disposed on either side of a luminescent layer wherein a transparent electrode and a backing electrode are formed on respective dielectric layers. In a preferred embodiment, the dielectric films include tantalum oxide and at least one oxide of either indium, tin, or zinc wherein the total content of the indium, tin, and zinc atoms in the dielectric layer comprise 55 atomic % or less with respect to the total content of tantalum, indium, tin, and zinc atoms. The dielectric films have a relatively high dielectric constant and high breakdown strength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.