Enhanced performance CCD output amplifier
US5589881A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1994 |
| Grant date | Dec 31, 1996 |
| Priority date | — |
| Expiry date | Nov 9, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/71
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A low-noise FET amplifier is connected to amplify output charge from a che coupled device (CCD). The FET has its gate connected to the CCD in common source configuration for receiving the output charge signal from the CCD and output an intermediate signal at a drain of the FET. An intermediate amplifier is connected to the drain of the FET for receiving the intermediate signal and outputting a low-noise signal functionally related to the output charge signal from the CCD. The amplifier is preferably connected as a virtual ground to the FET drain. The inherent shunt capacitance of the FET is selected to be at least equal to the sum of the remaining capacitances.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.