Random access memory having flash memory
US5590073A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 1994 |
| Grant date | Dec 31, 1996 |
| Priority date | — |
| Expiry date | Nov 21, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C14/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor nonvolatile memory device including first and second bit lines, a buffer memory connected to the first and second bit lines, an electrically erasable programmable nonvolatile memory connected to the first and second bit lines, a writing latch circuit to which the first and second bit lines are connected in parallel and having a differential sensor type sense amplifier, and a switching circuit for switching the nonvolatile memory and the latch circuit to a nonconnected state at the time of operation of the buffer memory and switching the buffer memory and the latch circuit to a nonconnected state at the time of a writing or erasure operation on the nonvolatile memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.