Semiconductor device and method of fabrication
US5591666A · kind A · utility
3Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 1995 |
| Grant date | Jan 7, 1997 |
| Priority date | — |
| Expiry date | Aug 7, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/973
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating semiconductor devices including defining an area on the surface of a substrate, selectively growing, on the area, a crystalline material with at least one defined crystallographic facet, and selectively growing a semiconductor device on the crystallographic facet. In a second embodiment, an area is defined on the surface of a substrate and chemical beam epitaxy is used to selectively grow, on the area, a layer of indium arsenide with at least one defined crystallographic facet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.