Method of manufacturing a semiconductor device having self aligned contact hole
US5591670A · kind A · utility
9Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1995 |
| Grant date | Jan 7, 1997 |
| Priority date | — |
| Expiry date | Jun 5, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A highly integrated semiconductor device and method for manufacturing the same are disclosed. The device has a self-aligned contact structure for increasing a contact margin upon forming a self-aligned buried contact hole. An oxide film of an upper portion of a gate electrode is chamfered in order to form a self-aligned buried contact hole. Therefore, a self-aligned contact hole can be formed without enhancing the step, and as a result, the step between the cell and the peripheral portion of the cell can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.