Compound semiconductor field effect transistor having a controlled diffusion profile of impurity elements
US5591994A · kind A · utility
2Cited by
4References
13Claims
0Family size
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Key dates
| Filing date | Jul 25, 1995 |
| Grant date | Jan 7, 1997 |
| Priority date | — |
| Expiry date | Jul 25, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/161
Abstract
A field effect transistor includes a substrate of a compound semiconductor material, source and drain regions formed in the substrate, a channel region defined between the source and said drain regions, a gate electrode provided on the substrate so as to cover the channel region, and a pair of diffusion suppressing regions provided in the substrate respectively at both lateral ends of the channel region, each of the diffusion suppressing regions containing an electrically inert element that suppresses a diffusion of a dopant element therethrough.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.