Dielectric isolated type semiconductor device provided with bipolar element
US5592015A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1995 |
| Grant date | Jan 7, 1997 |
| Priority date | — |
| Expiry date | Oct 26, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76286
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided which makes a high withstand voltage bipolar transistor small and prevents deterioration in a switching speed of the transistor. A silicon oxide layer is formed on a silicon substrate, and a semiconductor island of one conductivity type which is isolated laterally by an isolation trench is formed on the silicon oxide layer. A silicon oxide film is formed on an outer periphery portion of the semiconductor island to bury the trench. In the semiconductor island, a bipolar transistor, namely a base region of the other conductivity type, is formed, and in the base region an emitter region of one conductivity type is formed and a collector region of one conductivity type is further formed. In the semiconductor island a diffusion region of the other conductivity type for extracting excessive carriers to which a constant electric potential is applied is further formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.